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7MBP100TEA060
Econo IPM series
Features
* Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit
600V / 100A 7 in one-package
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25C unless otherwise specified)
Item Bus voltage DC Surge Short operating Symbol VDC VDC(surge) VSC VCES IC ICP -IC PC IC ICP IF PC VCC Vin Iin VALM IALM Tj Topr Tstg Tsol Viso Rating Min. Max. 0 0 200 0 -0.5 -0.5 -0.5 -20 -40 450 500 400 600 100 200 100 347 50 100 50 198 20 Vcc+0.5 3 Vcc 20 150 100 125 260 AC2500 3.5 Unit V V V V A A A W A A A W V V mA V mA C C C C V N*m
DC 1ms Duty=72.3% *2 Collector power dissipation One transistor *3 Collector current DC 1ms Forward current diode Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Solder temperature *8 Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Mounting (M5)
Collector-Emitter voltage *1 Collector current
Inverter
Note *1 : Vces shall be applied to the input voltage between terminal P and U or u or W, N and U or V or W *2 : 125C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.665/(100 x 2.6) x 100=72.3% *3 : Pc=125C/IGBT Rth(j-c)=125/0.36=347W [Inverter] Pc=125C/IGBT Rth(j-c)=125/0.63=198W [Breake] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. *8 : Immersion time 101sec.
7MBP100TEA060
Electrical characteristics (at Tc=Tj=25C, Vcc=15V unless otherwise specified.) Main circuit
Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Collector current at off signal input Collector-Emitter saturation voltage
Brake
IGBT-IPM
Symbol ICES VCE(sat) VF ICES VCE(sat) VF ton toff trr PAV Condition VCE=600V Vin terminal open. Ic=100A Terminal Chip -Ic=100A Terminal Chip VCE=600V Vin terminal open. Terminal Ic=50A Chip Terminal -Ic=50A Chip VDC=300V,Tj=125C IC=100A Fig.1, Fig.6 VDC=300V, IC=100A Fig.1, Fig.6 Internal wiring inductance=50nH Main circuit wiring inductace=54nH Min. 1.2 100 Typ. 1.8 1.6 1.75 1.9 Max. 1.0 2.3 2.6 1.0 2.2 3.3 3.6 0.3 Unit mA V V mA V V s
Inverter
Forward voltage of Diode
Turn-on time Turn-off time Reverse recovery time Maximum Avalanche Energy (A non-repetition)
mJ
Control circuit
Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Symbol Iccp ICCN Vin(th) VZ tALM Condition Switching Trequency : 0 to 15kHz Tc=-20 to 125C Fig.7 ON OFF Rin=20k ohm Tc=-20C Fig.2 Tc=25C Fig.2 Tc=125C Fig.2 Alarm terminal Min. Typ. Max. Unit mA mA V V V ms ms ms ohm 18 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575
Current limit resistor
RALM
Protection Section ( Vcc=15V)
Item Over Current Protection Level of Inverter circuit Over Current Protection Level of Brake circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC IOC tDOC tSC TjOH TjH VUV VH Condition Tj=125C Tj=125C Tj=125C Tj=125C Fig.4 Surface of IGBT chips Min. 150 75 150 11.0 0.2 Typ. Max. 8 -12.5 Unit A A s s C C V V
5 20 0.5
Thermal characteristics( Tc=25C)
Item Junction to Case thermal resistance *9 Inverter Brake Case to fin thermal resistance with compound *9 For 1device, Case is under the device IGBT FWD IGBT Symbol Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Min. Typ. 0.05 Max. 0.36 0.665 0.63 Unit C/W C/W C/W - C/W
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1s, polarity ,10minuets Judge : no over-current, no miss operating Rise time 1.2s, Fall time 50s Interval 20s, 10 times Judge : no over-current, no miss operating Min. 2.0 5.0 Typ. Max. Unit kV kV
Recommendable value
Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Symbol VDC VCC Min. 13.5 2.5 Typ. 15.0 Max. 400 16.5 3.0 Unit V V Nm
Weight
Item Weight Symbol Wt Min. Typ. 270 Max. Unit g
7MBP100TEA060
Vin
Vin(th) On Vin(th) 90% 50%
IGBT-IPM
trr
Ic
90% 10% ton toff
Figure 1. Switching Time Waveform Definitions
/Vin Vge (Inside IPM ) Fault (Inside IPM )
off on Gate On Gate Off on off
normal alarm tALM > Max. 1 tALM >
Max.
/ALM
2
t ALM 2ms(typ.) 3
Fault : Over-current,Over-heat or Under-voltage
Figure 2. Input/Output Timing Diagram
tsc
Ic IALM
Ic IALM
Ic IALM
Figure.4 Definition of tsc
Vcc
20 k
DC 15V
P P IPM IPM
L
+ +
DC 300V
Vin
HCPL 4504
VccU DC 15V
SW1 20k
P IPM U
CT
GND
N
Ic
VinU GNDU
AC200V
Figure 6. Switching Characteristics Test Circuit
V DC 15V
SW2 20k
+
Vcc VinX GND
W
4700p
Icc A
Noise
Vcc P IPM Vin U V W GND N
N
DC 15V
Earth
Cooling Fin
P.G +8V fsw
Figure 5. Noise Test Circuit
Figure 7. Icc Test Circuit
7MBP100TEA060
Block diagram
P VccU VinU
4 3
IGBT-IPM
ALMU 2 RALM1.5k GNDU 1 VccV VinV
8 7
Pre Driver Vz U
ALMV 6 RALM1.5k GNDV 5 VccW VinW ALMW
12 11 10
Pre Driver Vz V
Pre Driver RALM1.5k Vz W
GNDW 9
Vcc VinX
14 16
Pre Driver Vz GND
13
VinY
17
Pre Driver Vz
VinZ
18
Pre Driver Vz
Pre-drivers include following functions 1.Amplifier for driver
B
2.Short circuit protection 3.Under voltage lockout circuit 4.Over current protection 5.IGBT chip over heating protection
VinDB ALM
15 19
Pre Driver RALM1.5k Vz N
Outline drawings, mm
M BCFM
Mass : 270g
7MBP100TEA060
Characteristics
Control circuit characteristics (Respresentative)
IGBT-IPM
P ower sup ply current vs. Switching frequency Tc=1 25C
60 Pow er su p ply c urre nt : Icc (m A)
V cc=17V V cc=15V
Input signal thresh old voltage vs. P ower sup ply voltag e
2 .5 Inpu t sig nal thres hold voltag e : Vin (on),Vin (off) (V)
Tj=25C Tj= 12 5C
50 40 30 20 10 0 0
P-sid e N-sid e
2
V cc=13V
} Vin(off)
1 .5
} Vin(on)
1
V cc=17V V cc=15V V cc=13V
0 .5
0 5 10 15 20 25 12 Switch in g freq u en cy : fs w (kHz) 13 14 15 16 17 Power su p p ly voltag e : Vcc (V) 18
Under voltage vs. Junction temp erature
14 12 10 8 6 4 2 0 20 40 60 80 100 12 0 Ju nc tion te m pe ra tu re : Tj (C) 140 Un de r volta ge h ys teris is : VH (V) 1
Un d er voltag e h ysterisis vs. Jn ction tem p erature
Und er voltag e : VUVT (V)
0 .8
0 .6
0 .4
0 .2
0 20 40 60 80 100 12 0 140 Ju n ction tem peratu re : Tj(C)
Alarm hold tim e vs. P ower sup ply voltag e
3 O ver he atin g p rotection : TjO H (C) O H h y ste risis : Tj H (C) Alarm hold time : tALM (m Se c) 2 .5 Tc= 10 0 C 2 Tc=25C 1 .5 1 0 .5 0 12 13 14 15 16 17 Power su p p ly voltag e : Vcc (V) 18 20 0
Over heatin g characteristics TjOH,TjH vs. Vcc
TjO H 15 0
10 0
50 TjH 0 12 13 14 15 16 17 18 Power su p p ly voltag e : Vcc (V)
7MBP100TEA060
Main circuit characteristics (Respresentative)
IGBT-IPM
Col lector cu rren t vs. Coll ec to r-Emitter voltag e Tj=25C(Ch ip) 12 0 10 0 80 60 40 20 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itte r vo ltage : Vce (V)
V cc= 17V V cc=13V Vc c= 15V
Collector Cu rre nt : Ic (A)
Col lector cu rren t vs. Collec tor-Emitter voltag e Tj=125C(Ch ip ) 12 0 10 0 80 60 40 20 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V)
V cc= 17V V cc=13V Vc c= 15V
Col lector cu rren t vs. Collec tor-Emitter voltag e Tj=125C (Term in al) 12 0 10 0 80 60 40 20 0 0 0 .5 1 1.5 2 2.5 3 Collector-Em itter vo lta g e : Vce (V)
Vc c= 15V
Collector Cu rre nt : Ic (A)
Collec tor Cu rre nt : Ic (A)
V cc=17V V c c= 13V
Forward current vs. Forward voltage (Chip)
15 0 12 5 C 2 5C 10 0 Fo rw ard Cu rren t : If (A) Fo rw ard Curren t : If (A) 15 0
Forward current vs. Forward voltage (Term inal)
12 5C
10 0
2 5 C
50
50
0 0 0.5 1 1.5 2 2 .5 Fo rw ard vol ta ge : Vf (V)
0 0 0.5 1 1.5 2 2 .5 Fo rw ard vol ta ge : Vf (V)
7MBP100TEA060
IGBT-IPM
Switching Loss vs. Collector Current Edc=30 0V,Vcc=15 V,Tj=25C
10 Switch in g los s : Eo n,Eo ff,Err (m J/cy cl e) Switch in g los s : Eo n,Eo ff,Err (m J/cy cl e) 10
Switching Loss vs. Collector Current Edc=300V,V cc=15V,Tj=1 25C
8
8
Eon
6 Eon 4
6
4 Eoff 2 E rr 0
2
Eoff E rr
0 0 20 40 60 80 10 0 120
0
20
40
60
80
10 0
120
Collector cu rren t : Ic (A)
Collec tor cu rren t : Ic (A)
Transient therm al resistance
Th erm al resista n ce : Rth (j-c) (C /W )
1
FWD
IG BT
0 .1
0.01 0.00 1 0.0 1 0 .1 1
Pu lse width :Pw (sec)
Power d eratin g for IG BT (per device)
40 0 Collecter P owe r Dissip ation : Pc (W ) 35 0 30 0 25 0 20 0 15 0 10 0 50 0 0 20 40 60 80 100 12 0 14 0 160 Case Tem p eratu re : Tc (C) Co lle cter Power D issip ation : P c (W ) 25 0
Power derating for FW D (per device)
20 0
15 0
10 0
50
0 0 20 40 60 80 100 12 0 14 0 160 Case Tem p eratu re : Tc (C)
7MBP100TEA060
IGBT-IPM
Switching tim e vs. Collector current Edc=30 0V,Vcc=15 V,Tj=25C
10 00 0 S witch in g tim e : to n,toff,tf (nSec) 10 00 0 S witch in g tim e : ton ,toff,tf (n Sec)
Switching tim e vs. Collector current Edc=300 V,V cc=15V,Tj=1 25C
ton 1 00 0 toff
ton toff 1 00 0
10 0 tf
10 0 tf
10 20 40 60 80 100 120 140 160 Col lector cu rren t : Ic (A)
10 20 40 60 80 100 120 140 160 Col lector cu rren t : Ic (A)
Reverse recovery characteristics trr,Irr vs.IF
trr125C R eve rse rec overy cu rren t:Irr(A) Reverse re covery time:trr(nsec)
10 0
trr2 5 C Irr125C
Irr2 5 C 10
1 20 40 60 80 100 120 140 160 Fo rw ard cu rren t:IF(A)
7MBP100TEA060
Characteristics
Dynamic Brake Characteristics (Respresentative)
IGBT-IPM
Collector current vs. Collector-Em itter voltage Tj=25C
80
V cc=15V Vc c= 17V
Collector current vs. Collector-Em itter voltage Tj=1 25C
80
Vc c= 15V
Coll ec to r Cu rre nt : Ic (A)
60
V cc=13V
Co llector Current : Ic (A)
60
V cc= 17V V cc=13V
40
40
20
20
0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V)
0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V)
Transient therm al resistance
Th erm al resista n ce : Rth (j-c) (C /W )
1 IG B T
0 .1
0.01 0.00 1 0.0 1 0 .1 1
Pu lse width :Pw (sec)
Power derating for IG BT (per device)
25 0 Co lle cter Power D issip ation : P c (W )
20 0
15 0
10 0
50
0 0 20 40 60 80 100 12 0 14 0 160 Case Tem p eratu re : Tc (C)

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